View APT64GA90LD30_4500262.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT64GA90LD30
900V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT64GA90LD30 poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
(R)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
900 117 64 193 30 500 193A @ 900V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 250A VGE = 15V, IC = 38A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
900
Typ
2.5 2.2 4.5
Max
3.1 6 350 1500 100
Unit
V
VGE =VCE , IC = 1mA
A
6 - 2009 052-6347 Rev C
VGS = 30V
nA
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on) tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 38A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 38A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 38A RG = 4.74 TJ = +125C 193 18 26
APT64GA90LD30
Min Typ
3525 318 53 162 26 64 A nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
131 104 1192 1088 17 27 181 171 1857 2311
ns
J
ns
J
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT Torque
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-264 Package), 4-40 or M3 screw
Min
-
Typ
-
Max
.25 0.8
Unit
C/W g in*lbf
-
6.1
10
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6347 Rev C
6 - 2009
Typical Performance Curves
100
V
GE
APT64GA90LD30
300 15V 13V 11V 10V 200 150 100 50 0 9V 8V 7V 6V
= 15V
TJ= 125C TJ= 55C TJ= 150C IC, COLLECTOR CURRENT (A) 250
IC, COLLECTOR CURRENT (A)
80
60
TJ= 25C
40
20
0
0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0
16 14 12 10 8 6 4 2 0
0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 38A C T = 25C
J
VCE = 180V VCE = 450V VCE = 720V
TJ= -55C
TJ= 125C TJ= 25C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
0
20
40 60 80 100 120 140 160 180 GATE CHARGE (nC) FIGURE 4, Gate charge
5
3
IC = 76A IC = 38A
4
3
IC = 76A IC = 38A
2 IC = 13A 1
2
IC = 19A
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
0
6
8
10
12
14
16
0
0
25
50
75
100
125
150
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 160 140 IC, DC COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 6 - 2009 25 50 052-6347 Rev C
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
24 td(ON), TURN-ON DELAY TIME (ns) 22 20 18 16 14 12 10 200 td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 600V TJ = 25C, or 125C RG = 4.7 L = 100H
APT64GA90LD30
160
VGE =15V,TJ=125C
120
VGE =15V,TJ=25C
80
40
VCE = 600V RG = 4.7 L = 100H
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 80 RG = 4.7, L = 100H, VCE = 600V 70 60
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250
0
200
tr, RISE TIME (ns)
tr, FALL TIME (ns)
50 40 30 20 10 0 0 10 20
TJ = 25 or 125C,VGE = 15V
150
TJ = 125C, VGE = 15V
100
TJ = 25C, VGE = 15V
50
30
40
50
60
70
80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J) 5000 4000 3000 2000 1000 0
TJ = 25C TJ = 125C
V = 600V CE V = +15V GE R =4.7
G
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 10 20 30 40 50 60 70 80
TJ = 25C TJ = 125C
V = 600V CE V = +15V GE R = 4.7
G
0
RG = 4.7, L = 100H, VCE = 600V
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 2000 1000 0 0
Eon2,38A Eoff,38A Eon2,19A Eoff,19A Eon2,76A Eoff,76A
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J)
V = 600V CE V = +15V GE R = 4.7
G
V = 600V CE V = +15V GE T = 125C
J
5000 4000 3000
Eon2,76A Eoff,76A
6 - 2009
Eon2,38A
2000
Eoff,38A
052-6347 Rev C
1000 0
Eon2,19A Eoff,19A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10,000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 1000
APT64GA90LD30
1,000
10
100
Coes
1
Cres 0 100 200 300 400 500 600 700 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 10
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.30 ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.10 0.15 0.10 0.05 0
D = 0.9 0.7 0.5 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 0.1
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
1
10
RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6347 Rev C
6 - 2009
APT64GA90LD30
10% Gate Voltage TJ = 125C 90% tr
V CC IC V CE
APT30DQ100
td(on)
Collector Current 5% Collector Voltage
5%
10%
Switching Energy
A D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C
Gate Voltage Collector Voltage tf 10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
052-6347 Rev C
6 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 102C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified.
APT64GA90LD30 30 43 150 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C
Min
Type
2.5 3.06 1.92
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.90 Z JC, THERMAL IMPEDANCE (C/W) 0.80 D = 0.9 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5
Note:
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 30A, diF/dt = -200A/s VR = 667V, TC = 25C
Min
-
Typ 24 295 440 4 330 1550 8 150 2250 25
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 667V, TC = 125C
-
IF = 30A, diF/dt = -1000A/s VR = 667V, TC = 125C
-
0.7
PDM
t1 t2
0.3
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6347 Rev C
6 - 2009
Dynamic Characteristics
100 90 IF, FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 175C
TJ = 25C unless otherwise specified
500 trr, REVERSE RECOVERY TIME (ns)
T = 125C J V = 800V
R
APT64GA90LD30
60A 400
300
30A 15A
200
TJ = 125C TJ = 25C TJ = -55C
100
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 4000 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 800V
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35
T = 125C J V = 800V
0
3500 3000 2500 2000 1500 1000 500 0
R
60A
30 25 20
R
60A
30A
30A 15 10 5 0 15A
15A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 trr Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 IRRM Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 50 45 40 35 IF(AV) (A) 30 25 20
Duty cycle = 0.5 T = 175C
J
0.6
0.4
Qrr
15 10 5
0.2 0.0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 160 CJ, JUNCTION CAPACITANCE (pF) 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
052-6347 Rev C
6 - 2009
Dynamic Characteristics
TJ = 25C unless otherwise specified
Vr
APT64GA90LD30
+18V 0V
diF /dt Adjust
APT10035LLL
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Collector
(Cathode)
20.80 (.819) 21.46 (.845)
Collector
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Gate Collector (Cathode) Emitter (Anode)
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Collector (Cathode) Emitter (Anode)
5.45 (.215) BSC 2-Plcs.
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6347 Rev C
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
6 - 2009
2.21 (.087) 2.59 (.102)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)

▲Up To Search▲

Price & Availability of APT64GA90LD30

	To Download APT64GA90LD30 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .